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| PD - 91521A IRF9520N HEXFET(R) Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V G S RDS(on) = 0.48 ID = -6.8A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. -6.8 -4.8 -27 48 0.32 20 140 -4.0 4.8 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. --- 0.50 --- Max. 3.1 --- 62 Units C/W 5/13/98 IRF9520N Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -100 --- --- -2.0 1.4 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.10 --- --- --- --- --- --- --- --- --- --- 14 47 28 31 4.5 7.5 350 110 70 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 0.48 VGS = -10V, ID = -4.0A -4.0 V VDS = V GS, ID = -250A --- S VDS = -50V, ID = -4.0A -25 VDS = -100V, VGS = 0V A -250 VDS = -80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 27 ID = -4.0A 5.0 nC VDS = -80V 15 VGS = -10V, See Fig. 6 and 13 --- VDD = -50V --- ID = -4.0A ns --- RG = 22 --- RD = 12, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- -6.8 showing the A G integral reverse --- --- -27 p-n junction diode. S --- --- -1.6 V TJ = 25C, IS = -4.0A, VGS = 0V --- 100 150 ns TJ = 25C, IF = -4.0A --- 420 630 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD -4.0A, di/dt -300A/s, VDD V(BR)DSS, TJ 175C Starting TJ = 25C, L = 18 mH RG = 25, IAS = -4.0A. (See Figure 12) Pulse width 300s; duty cycle 2%. IRF9520N 100 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP 100 VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP 10 10 1 1 -4.5V 20s PULSE WIDTH TJ = 150 C 1 10 100 -4.5V 0.1 0.1 1 20s PULSE WIDTH TJ = 25 C 10 100 0.1 0.1 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics, 100 2.5 ID = -6.7A R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) TJ = 175 C 10 2.0 TJ = 25 C 1.5 1.0 1 0.5 0.1 4 5 6 7 V DS = 10V 20s PULSE WIDTH 8 9 10 0.0 -60 -40 -20 0 VGS = -10V 20 40 60 80 100 120 140 160 180 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF9520N 800 -VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = -4.0 A 16 VDS =-80V VDS =-50V VDS =-20V C, Capacitance (pF) 600 Ciss 12 400 Coss Crss 8 200 4 0 1 10 100 0 0 5 10 FOR TEST CIRCUIT SEE FIGURE 13 15 20 25 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) -ISD , Reverse Drain Current (A) 10us -ID , Drain Current (A) I TJ = 175 C 10 10 100us TJ = 25 C 1ms 1 1 10ms 0.1 0.2 V GS = 0 V 0.8 1.4 2.0 2.6 0.1 1 TC = 25 C TJ = 175 C Single Pulse 10 100 1000 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRF9520N VDS 8.0 RD VGS RG D.U.T. + -I D , Drain Current (A) 6.0 -10V Pulse Width 1 s Duty Factor 0.1 % 4.0 Fig 10a. Switching Time Test Circuit 2.0 VGS 10% td(on) tr t d(off) tf 0.0 25 50 75 100 125 150 175 90% VDS TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case - VDD IRF9520N VDS L 400 EAS , Single Pulse Avalanche Energy (mJ) RG D .U .T IA S D R IV E R 0 .0 1 VD D A ID -1.7A -2.5A BOTTOM -4.0A TOP -2 0 V tp 300 200 15V Fig 12a. Unclamped Inductive Test Circuit IAS 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) tp V (BR)DSS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F -10V QGS VG QGD VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit + D.U.T. - VDS IRF9520N Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - + RG VGS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test + VDD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS IRF9520N Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 10 .54 (.4 15) 10 .29 (.4 05) 3 .7 8 (.149 ) 3 .5 4 (.139 ) -A 6.47 (.25 5) 6.10 (.24 0) -B 4.69 ( .18 5 ) 4.20 ( .16 5 ) 1 .32 (.05 2) 1 .22 (.04 8) 2.87 (.11 3) 2.62 (.10 3) 4 1 5.24 (.60 0) 1 4.84 (.58 4) 1.15 (.04 5) M IN 1 2 3 L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN 1 4.09 (.55 5) 1 3.47 (.53 0) 4.06 (.16 0) 3.55 (.14 0) 3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 0.93 (.03 7) 0.69 (.02 7) M BAM 3X 0.55 (.02 2) 0.46 (.01 8) 0 .3 6 (.01 4) 2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H 2 .92 (.11 5) 2 .64 (.10 4) 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S . Part Marking Information TO-220AB EXAMP : TH IS N 1 0 1 0 E X A M P L E :L ETH IS IS A N AIR F IR F1 0 1 0 W H ASSEMB W ITH ITA S S E M B L Y L Y L C CO 9B 9B L O T O TO D E D E 1M 1 M A A IN TE R N A N A N IN TE R N A T IO TIOL A L R E C TIF R E C TIFIE R IE R IR F IR F 10 1 0 1 0 10 L LOG OGO 9 2 49 2 4 6 6 9B 9B1 M 1 M ASSEMB ASSEMBLY LY L C CO L OT O T O D E D E PA N NU MB P A R T R TU M B E R E R DA C CO D A TE TEO D E D E (Y Y(Y Y W W ) WW) Y Y Y Y Y= A R A R = E YE W = EE W WW = W EWK E K WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 5/98 |
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